Abstract
As a step toward creating a chemical vapor deposition (CVD) process for PbTiO3 thin films, lead oxide films were deposited and then examined. The reaction was oxidation controlled, with an apparent activation energy of 97 kJ/mol in this low‐temperature, low‐pressure metalorganic CVD (MOCVD) process. Across the deposition parameters examined, several distinct types of morphology were observed. Growth occurred as a combination of layer‐on‐layer and island formation. The structural and chemical properties of the lead oxide were examined by Auger electron spectroscopy, Raman spectroscopy, X‐ray diffraction, scanning electron microscopy, and electron diffraction. Various forms of lead oxide were produced (litharge, massicot, and scrutinyite, singly or in combination with each other). The deposition parameters used in this work showed a tendency to maintain the same crystalline form from the initial nucleation stages through post‐deposition annealing. Lead oxide formed readily on SiO2 surfaces (contrary to studies by other researchers) and, indeed, reacted with the underlying SiO2 layer.
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