Abstract
The correlation length (Λ) of interface roughness in GaAs/AlAs quantum wells (QWs) prepared by molecular beam epitaxy (MBE) was studied by measuring and analyzing the electron concentration dependences of mobilities. When the bottom AlAs barrier of QWs is prepared by alternate beam MBE and/or by the use of superlattice buffer beneath the QW, the mobility of two-dimensional electrons is substantially enhanced. The lateral correlation length Λ of such samples is found to become as large as 200–300 Å. We have found that Λ of the bottom (GaAs-on-AlAs) interface of the QW is about 70 Å when prepared by conventional MBE.
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