Abstract
La0.5Sr0.5CoO3 (LSCO) and LaNi0.6Co0.4O3 (LNCO) thin films were deposited on Pt/Ti/SiO2/Si substrates by DC reactive sputtering at 450°C and were annealed at temperatures ranging from 550°C to 750°C for 30 min in an O2 ambient to improve the crystallinity of the films and to reduce their resistivity. LSCO and LNCO thin films were successfully prepared at temperatures as low as 450°C. Pb(Zr0.48Ti0.52)O3 (PZT) thin films of 150 nm thickness were deposited on the LSCO and LNCO electrodes by DC reactive sputtering at a substrate temperature of 550°C. PZT films grown on LSCO and LNCO electrodes showed a (001) preferred orientation and had a uniform matrix of densely packed round grains. The leakage current density remained on the order of 10-7–10-9 A/cm2 at an applied voltage below 5 V. PZT thin films grown on LSCO/Pt showed a remanent polarization (2Pr) of about 46–52 µC/cm2, and a coercive voltage of about 1 V. PZT thin films grown on LNCO/Pt electrodes showed a lower coercive voltage (<0.6 V) and a smaller remanent polarization (2Pr) of about 28.8 µC/cm2 than those of PZT films grown on LSCO/Pt. LSCO/Pt and LNCO/Pt electrodes were essential for lowering the crystallization temperature as well as for obtaining good electrical properties of PZT capacitors.
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