Abstract
During crystal growth processes, growth sectors are formed due to growth along different crystallographic directions. Although the crystal structure in the different growth sectors is unchanged, strain induced topography contrast is observed by synchrotron X-ray topography. In this study, synchrotron monochromatic beam X-ray topography (SMBXT), synchrotron X-ray plane wave topography (SXPWT), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and secondary ion mass spectrometry (SIMS) are used to characterize growth sectors in gallium nitride (GaN) substrate wafers grown by patterned hydride vapor phase epitaxy (HVPE). The SMBXT images reveal the boundaries of {0001} and {1122} type growth sectors. Strain maps generated from SXPWT shows that the out-of-plane strains in different growth sectors have a difference of the order of 10-5. SEM images from SE2 signal shows no contrast of growth sector boundaries while images from Robinson detector (RBSD) show different growth sectors as different grey scale contrast, indicating a strain effect. SIMS analysis shows that the different oxygen impurity levels in the growth sectors, which is the origin of the strain. A formation mechanism of growth sectors in patterned HVPE grown GaN wafers is proposed.
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