Characterization of Defects in Gallium Nitride Thin Films by SEM

Abstract

Gallium nitride (GaN) thin films samples were grown by metal-organic chemical vapor deposition (MOCVD) with ammonia and trimethyl-gallium, and the samples were annealed rapidly at different temperature. The scanning electron microscope (SEM) analysis was employed to study the surface morphology and lattice defects of the GaN thin films. The surface morphology of the thin films prepared at different condition was uniform and smoothly. The relationship of the films defects and the annealed temperature were summarized.