Abstract
The results of an experimental study of the surface morphology and structural properties of thin films of gallium nitride on sapphire obtained by pulsed laser deposition are presented. Pulse laser sputtering of gallium nitride films was carried out by sputtering a liquid gallium target in an atmosphere of nitrogen and argon. Using scanning electron microscopy and energy dispersive analysis, it was found that thin gallium nitride films obtained at a fluence of 0.75 J/cm2 have a composition close to stoichiometric. It was determined that a decrease in fluence during pulsed laser deposition of thin gallium nitride films on sapphire reduces the arithmetic average surface roughness to 0.891 nm. films.
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