Abstract
Gallium nitride (GaN) and indium-gallium nitride (InxGa1-xN) thin films were directly grown on several non-single-crystalline substrates such as quartz glass and amorphous-carbon-coated graphite. The films were grown by using a molecular beam epitaxy apparatus having single or dual nitrogen radio-frequency plasma cells, and in addition, germanium (Ge) or magnesium (Mg) doping to the films was also attempted. Crystallinity, photoluminescence (PL) property, and electrical property of the obtained films were investigated. Highly c-axis oriented GaN and InxGa1-xN thin films were obtained on the non-single-crystalline substrates. Near-band-edge emissions were observed in their PL spectra and the intensities were strongly enhanced by Ge doping. Ge doping was also effective on reducing resistivity of the GaN thin films grown on the non-single-crystalline substrates. Electrochemical capacitance-voltage measurements were carried out on the Mg-doped GaN thin films; and p-type conduction in the films was confirmed.
Highlights
Nitride compound semiconductors, such as gallium nitride (GaN) and indium-gallium nitride (InxGa1−xN) alloysHow to cite this paper: Sato, Y., Ishizaki, S., Murakami, Y., Idham, M., Ain, N. and Matsunaga, T. (2015) Some Properties of Group‐III Nitride Thin Films Directly Grown on Non‐Single‐Crystalline Substrates by Using a Molecular Beam Epitaxy Appa‐ ratus
GaN thin films were grown on several substrates, that is, a synthetic quartz glass, an amorphous-carboncoated graphite, and a c-face sapphire single-crystalline wafer as a reference
In the case of the GaN thin film grown on the quartz glass substrate, only (0002) and (0004) GaN diffraction peaks relating the wurtzite-type crystal structure are observed in the X-ray diffraction (XRD) pattern, and it is to the case of the film grown on the c-face sapphire substrate as shown in Figure 1(a) and Figure 1(b), respectively
Summary
Nitride compound semiconductors, such as gallium nitride (GaN) and indium-gallium nitride (InxGa1−xN) alloysHow to cite this paper: Sato, Y., Ishizaki, S., Murakami, Y., Idham, M., Ain, N. and Matsunaga, T. (2015) Some Properties of Group‐III Nitride Thin Films Directly Grown on Non‐Single‐Crystalline Substrates by Using a Molecular Beam Epitaxy Appa‐ ratus. The nitride semiconductors have been expected as optoelectronic-conversion materials for highly efficient solar cells in addition to such light-emitting devices. Most of the group-III nitride semiconductor thin films are grown on single-crystalline substrates such as sapphire wafers to obtain superior crystallinities which connect to superior electrical and optical properties of the films. Productions of sapphire wafers, which have been the most popular single crystalline substrate used for the growths of nitride semiconductors, have been rapidly developed. Their production costs have been drastically decreased and the wafer sizes have been expanded. Growths of nitride semiconductor thin films have been developed on silicon single-crystalline substrates. These single-crystalline wafers still have sufficient availability for the heteroepitaxial growths of the nitride semiconductor thin films
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