Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy

Abstract

We have used low-frequency noise (LFN) spectroscopy to characterize generation-recombination (G-R) centers in silicon nanowires grown using chemical vapor deposition. The LFN spectra showed Lorentzian behavior with well-defined corner-frequency indicative of single G-R center in the bandgap. From the temperature-dependent LFN measurement a single deep level at 0.39 eV from the bandedge is identified, which matches closely with the Au donor level in Si. The trap concentration was estimated at 2.0 × 1012 cm−3 with electron and hole capture cross-sections of 9.5 × 10−17 cm2 and 1.4 × 10−16 cm2, respectively. This study demonstrates the potential of the LFN spectroscopy in characterization of deep-levels in nanowires.