Abstract
In this study deep level transient spectroscopy has been performed on boron–nitrogen co-doped 6H-SiC epilayers exhibiting p-type conductivity with free carrier concentration ( N A –N D )∼3×10 17 cm −3 . We observed a hole H 1 majority carrier and an electron E 1 minority carrier traps in the device having activation energies E v + 0.24 eV, E c −0.41 eV, respectively. The capture cross-section and trap concentration of H 1 and E 1 levels were found to be (5×10 −19 cm 2 , 2×10 15 cm −3 ) and (1.6×10 −16 cm 2 , 3×10 15 cm −3 ), respectively. Owing to the background involvement of aluminum in growth reactor and comparison of the obtained data with the literature, the H 1 defect was identified as aluminum acceptor. A reasonable justification has been given to correlate the E 1 defect to a nitrogen donor.
Published Version
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