Abstract
This paper examines the damage behaviors of BSi molecular ion implantation into silicon. Silicon wafers tilted 7° were implanted with 77 keV BSi for a dose of 5 × 10 14 cm −2 and then rapid thermal annealed at 850, 950 or 1050 °C for 25 s in nitrogen ambient. The same conditions were applied to a 22 keV B monomer ion implantation for comparative purposes. Theoretical damage calculations were yielded using the SRIM computer code. Experimental measurements were performed using secondary ion mass spectrometry, Rutherford backscattering spectrometry with channeling, transmission electron microscopy and resistivity methods. The results indicated that the evolution of extended defects, boron segregation peaks and sheet resistance with annealing conditions closely corresponds to the depth profiles of interstitials as well as vacancies.
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