Abstract
ABSTRACTBi2Se3 as a semiconductor with narrow band gap about 0.24 eV has good thermoelectric properties. Bi2Se3 thermoelectric films were prepared by electrodeposition using Bi2O3 and SeO2 as raw materials, and the appropriate heat treatment process was adopted to improve the crystallinity of product films. The phases of product films were analyzed by X-ray diffraction (XRD) and the morphology was characterized by scanning electron microscopy (SEM), and the compositions of product films were analyzed by energy dispersive spectroscopy (EDS). The results show that the crystallinity of Bi2Se3 films can be improved significantly when heat treated at 350°C for 2 h or 400°C for 1 h. The XRD diffraction peaks are corresponding to (015), (1 0 10) and (110) crystal planes respectively. The surface of the product films shows particle aggregation, dendritic crystal and a few holes distributing irregularly.
Published Version
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