Abstract
A low-power microwave-assisted electron cyclotron resonance (ECR) plasma system is shown to be a powerful and effective source of atomic oxygen (AO) useful in material processing. A 2.45 GHz microwave source with maximum power of 600 W was launched into the cavity to generate the ECR plasma. A catalytic nickel probe was used to determine the density of AO. The density of AO is studied as a function of pressure and axial position of the probe in the plasma chamber. It was found to vary from ∼1×1020 to ∼10×1020 atom m−3 as the plasma pressure was varied from 0.8 to 10 mTorr. The effect of AO in oxidation of silver is investigated by gravimetric analysis. The stoichiometric properties of the oxide are studied using the x-ray photoelectron spectroscopy as well as energy dispersive x-ray analysis. The degradation of the silver surface due to sputtering effect was viewed by scanning electron spectroscopy. The sputtering yield of oxygen ions in the plasma is calculated using the TRIM code. The effects of plasma pressure and the distance from the ECR zone on the AO density were also investigated. The density of AO measured by oxidation of silver is in good agreement with results obtained from the catalytic nickel probe.
Published Version
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