Abstract
The structure and quality of AlxGa1-xAs/AlyGa1-yAs/GaAs step multi-quantum wells grown by molecular beam epitaxy on (001) GaAs substrates have been studied by means of X-ray double crystal diffraction. We demonstrate that for such a complicated structure it is necessary to consider the influence of beam flux variations on layer thickness and composition in order to obtain good agreement between theoretical calculated rocking curves and their experimental counterparts. As a result, the structural parameters were simply determined, and the information about the beam flux variation was obtained. Such results may explain the difference between the design structure and that obtained.
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