Abstract
We have investigated the structural properties of ZnSe epilayers that were grown by molecular beam epitaxy on (001) GaAs substrate with different tilt angles. Two-dimensional growth mode increased with increasing tilt of (001) GaAs toward [010] direction. This was confirmed by atomic force microscopy (AFM) analysis and double crystal X-ray diffraction. We have obtained ZnSe of high crystalline quality layers on (001) GaAs off oriented toward [010] direction. Light emitting devices that were fabricated by ZnSe wafers grown on 4° off toward [010] GaAs substrate have longer lifetimes than the ones that were grown on nominal (001) GaAs substrate, which provide an evidence that crystalline quality improvement effects may become apparent by using (001) vicinal substrate surfaces.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
