Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices

Abstract

The use of TiON films by plasma-enhanced atomic layer deposition as insulators in thin film electroluminescent (TFEL) devices was examined and compared with that of TiO 2 by ALD. A ZnS:Mn TFEL device using AlON-TiON stacked insulator (ATON) exhibited the figure of merit of 12 μC/cm 2 . The luminance of the TFEL device with an ATON insulator was twice as high as that with a conventional Al 2 O 3 insulator. This high performance can be attributed not only to high dielectric constant of the ATON film, but the improved quality of the interface of the phosphor and insulator, as well.