Abstract
Thin film electroluminescent devices based on the red emission of Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> :Eu were fabricated by pulsed laser deposition. Time dependent electrical and optical measurements were used to characterize device performance and behavior.
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