Abstract
Europium doped gallium oxide thin film electroluminescent devices with bright, red emission (611nm) and relatively low threshold voltages of 60V were produced using pulsed laser deposition. The use of transparent conducting electrodes of amorphous InGaZnO on transparent aluminum titanium oxide/indium tin oxide/7059 Corning glass substrates resulted in a device that is transparent throughout the visible spectrum. At 100V, with 1kHz excitation, the luminance was 221cd∕m2. The Sawyer-Tower circuit analysis and time dependent emission measurements suggest that the charge trapping at the aluminum titanium oxide/Ga2O3:Eu interface plays an important role in producing efficient emission.
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