Abstract
We report on a new, simple process to fabricate planar Hg1−yCdyTe/Hg1−xCdxTe (x<y) heterostructure photodiodes with p-on-n configuration. The material used for this demonstration was a double-layer p-on-n heterostructure that was grown by a liquid-phase-epitaxy technique. The p-on-n planar devices consisted of an arsenic-doped p-type epilayer (y=0.28) on top of a long-wavelength infrared n-type epilayer (x=0.225, =10 m). The ion-beam-milling p-type to n-type conversion effect was used to delineate the active device element, and to isolate the planar device. Detailed analysis of the current-voltage characteristics of these diodes as a function of temperature show that they have high performance, and that their dark current is diffusion-limited down to 60 K. The results show that over a wide range of cut-off wavelengths, the R0A product values are close to the theoretical limit. Electro-optic properties of a 2-D array of small diodes with a 60- m pitch are presented, and demonstrate the potential of the new process for implementation of 2-D arrays. The electrical properties of the photodiodes are stable following long-term annealing at 80°C for 48 hours.
Published Version
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