Abstract
We report on a simple process to fabricate planar Hg1−yCdyTe/Hg1−xCdxTe (x<y) heterostructure photodiodes with p-on-n configuration. The material used for this demonstration was a double-layer p-on-n heterostructure that was grown by a liquid-phase-epitaxy technique. The p-on-n planar devices consisted of an arsenic-doped p-type epilayer (y=0.28) on top of a long-wavelength infrared n-type epilayer (x=0.225, λ=10 μm). The ion-beam-milling p-to-n type conversion effect was used in order to delineate the active device element, and to isolate the planar device. Detailed analysis of the current–voltage characteristics of these diodes as a function of temperature show that they have high performance and that their dark current is diffusion limited down to 60 K. The results show that the R0A values are close to the theoretical limit over a wide range of cutoff wavelengths.
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