Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling

Abstract

Dual mode AlGaN/GaN metal oxide semiconductor (MOS) heterostructure field-effect transistor (HFET) devices were fabricated and characterized. In HFET mode of operation the devices showed an f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /spl middot/L/sub g/ product of 12GHz/spl middot/μm at Vgs=-2 V. The AlGaN devices showed formation of an accumulation layer under the gate in forward bias and a f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /spl middot/L/sub g/ product of 6GHz/spl middot/μm was measured at Vgs=5 V. A novel piecewise small signal model for the gate capacitance of MOS HFET devices is presented and procedures to extract the capacitance in presence of gate leakage are outlined. The model accurately fits measured data from 45MHz to 10GHz over the entire bias range of operation of the device.