Abstract
A simple equivalent circuit model including noise sources for the GaN heterostructure field effect transistor is presented and analyzed. The model is used to determine optimum source impedance for low noise amplifier applications. A good agreement between the model and measured NFmin of experimental devices is shown. Prototype transistors with a 0.75μm gate length and 80μm width delivered a power-added efficiency of 45.6% and a minimum noise figure of 2.1dB at 2.4GHz when operated from a 48V supply. Gate leakage current was found to be an important noise source.
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