Abstract
Polycrystalline boron nitride (BN) films are synthesized using BCl3 and N2 as source gases, by plasma-assisted chemical vapor deposition. BN films consist of nanocrystalline grains of 3 nm in size. The energy gap is estimated to be 6.0 eV from ultraviolet-visible optical transmission measurement. The electrical resistivity is also estimated to be 2×1011 and 4.9×102 Ω· cm for undoped and sulfur (S)-doped BN films, respectively. Electron field emission is observed from S-doped BN film deposited on the Si substrate. The emission current is detected at electric fields higher than 9 V/µ m. The emission current of 10 µ A is obtained at 21 V/µ m. This field emission characteristic is compared with that of polycrystalline diamond films treated with H2 plasma.
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