Abstract
Abstract Boron nitride (BN) films were synthesized using BCl 3 and N 2 as source gases by plasma-assisted chemical vapor deposition (PACVD). The BN film consists of hexagonal grains of 3 nm in size. The energy gap is estimated to be as wide as 6.0 eV from ultraviolet-visible optical transmission measurement. The electrical resistivity is estimated to be 2 × 10 11 and 1.3 × 10 2 Ω cm for undoped and sulfur-doped BN films, respectively. The electron emission current is detected at electric fields higher than 9 V/μm. The tunneling barrier height is estimated to be 0.1 eV from the Fowler-Nordheim (FN) plot. It is demonstrated that the electron emission characteristic of Si tip array is much improved by coating with BN film.
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