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Abstract
The extrinsic silicon infrared sensing MOSFET (IRFET) is an integrated circuit element which has been designed for infrared imaging applications employing large scale integrated arrays, in the near, middle and far infrared wavelength regions. Detailed results have been previously published on the operation of the gold-doped devices in the near infrared wavelength regions. This paper specifically addresses the characterization of the indium-doped and gallium-doped infrared sensing MOSFET in the middle, 3 to 5 micrometer, and far, 8 to 14 micrometer, wavelength regions respectively. Quantum efficiencies in the range 1 to 10.0% and responsivities in the range 1×104 to 1×109 A/J or 1×102 to 1×106 A/W can be obtained.
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