Abstract
The anodic reaction condition dependence and the oxidation time dependence of the electric capacitance and the dielectric loss factor have been investigated for the thermal oxide of porous silicon formed with highly phosphorus diffused silicon. A high degree of phosphorus diffusion in the anodic reaction region in advance of the reaction is an effective way to decrease oxide capacitance produced by the oxidation of porous silicon formed using n-type silicon. The frequency dependence of the electric capacitance and the dielectric loss are discussed. A model based on interstitial conduction is investigated to explain the experimental results regarding the frequency dependence of capacitance and tan δ.
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