Abstract
Abstract Experimental study of dc and ac transport properties of CuInSe2/ZnO heterostructure is presented. The current–voltage (I–V) and frequency dependent capacitance (C–f) characteristics of CuInSe2/ZnO heterostructure were investigated in the temperature range 160–393 K. The heterostructure showed non-ideal behavior of I–V characteristics with an ideality factor of 3.0 at room temperature. Temperature dependent dc conductivity studies exhibited Arrhenius type behavior and revealed the presence of trap level. The C−2-V plot measured at frequency 50 kHz had shown non-linear behavior. An increase in capacitance with temperature was observed. The capacitance–frequency characteristics exhibited a transition between low frequency and the high frequency capacitance. As the temperature was lowered the transition occurred at lower frequencies. The frequency and temperature dependent device capacitance had shown a defect state having activation energy of 108 meV.
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