Characteristics of tantalum-doped silicon oxide-based resistive random access memory

Abstract

In this study, we fabricated and analyzed resistance switching characteristics for resistive random access memory (ReRAM) cell with Ta dopant into silicon oxide layer by co-sputtering at room temperature. From the current–voltage measurements, it was found that the current conduction in high resistive state was first dominated by Ohmic conduction caused by the intrinsic carriers in the Ta:SiOx thin film and then turned to space-charge-limited-current (SCLC) mechanism. In low resistance state (LRS), the current conduction mechanism from higher voltage to lower voltage were dominated by Fowler–Nordheim (F–N) tunneling and then SCLC mechanism, and finally dominated by Ohmic conduction mechanism. Furthermore, it was found that the Ti/Ta:SiOx/Pt RRAM cell fabricated in this study was durable and reliable.