Characteristics of Silicon-on-Low k Insulator Metal Oxide Semiconductor Field Effect Transistor with Metal Back Gate

Abstract

We proposed a silicon-on-low k insulator (SOLK) metal oxide semiconductor field effect transistor (MOSFET) with a metal back gate for high-speed and ultralow power devices. In this work, Benzocyclobutene (BCB) and tetramethyl ammonium hydroxide (TMAH) were employed to fabricate SOLK Devices without damaging the transistor channels. We successfully fabricated the proposed submicron fully depleted (FD) SOLK MOSFETs with a metal back gate. The process technologies and electrical properties of SOLK MOSFETs were introduced in detail. Furthermore, threshold voltage shift was obtained at 55 mV/V using a NMOSFET and at 35 mV/V using a PMOSFET and drain current characteristics are enhanced by the back gate bias.