Abstract
Thin films of polycrystalline silicon germanium (Si1 xGex) were prepared by using an ion-beam evaporation (IBE) method with Si-Ge multi-phase targets at low temperature. After irradiation of the targets by a pulsed light ion beam with a peak energy of 1 MV, 450 nm thick films were deposited on Si single crystal and quartz glass substrates. From Raman spectroscopy analysis, we determined that the thin films consisted of single phase Si1 xGex, whose composition was close to those of the targets.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
