Abstract
Thin films of single phase, polycrystalline silicon germanium (Si 1−x Ge x ) were prepared by ion-beam evaporation (IBE) using Si-Ge multi-phase targets. After the irradiation of the targets by an pulsed light ion beam with peak energy of 1 MV, 450 and 480 nm thick films were deposited on Si single crystal and quartz glass substrates, respectively. From XRD analysis, the thin films consisted of a single phase Si 1−x Ge x , whose composition is close to those of the targets.
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