Room temperature preparation of activated and crystallized p-type Si1−xGex thin film on glass substrate by intense, pulsed, ion beam evaporation

Abstract

A boron doped Si1−xGex thin film has been successfully prepared on a quartz (SiO2) glass substrate at room temperature (RT) by irradiating an intense, pulsed, ion beam on a Si–Ge–B pellet. As a result, in situ boron doped Si1−xGex thin film was found to be crystallized. In addition, by van der Pauw measurement, the resistivity, carrier density, and mobility of the thin film were observed as ρ=2.3×10−3Ωcm, n=7.2×1020cm−3, and μ=3.8cm2∕Vs, respectively. Thus, the boron doped Si1−xGex thin film was clarified to be not only crystallized but also activated without heat treatment.