Abstract

In the fabrication process of OTFTs is necessary to focus on the electrical properties of channel’s materials to improve its behavior and then exploit the use of this technology in different applications. For this reason, this paper was focused into studying the electrical behavior of OTFTs made with PBTTT instead of P3HT OTFT process. Furthermore, two different contacts configuration were also included. The OTFT’s structure used in this work was upper drain and source contacts / top gate contact. In addition, OTFTs output characterizations were measured and their physical-electrical parameters, as mobility and threshold voltage, were extracted by UMEM method. Good agreement in output characteristics was obtained between experimental data and modeled extracted data. Finally, after one month, a degradation of less than 5 % of the output characteristics was observed.

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