Abstract
Offset Corbino thin film transistor is a good candidate for high voltage thin film transistor (HVTFT) due to the uniform drain electric field distribution benefiting from the circular structure. The physical model of offset Corbino thin film transistor characteristics has yet to be clarified. In this study, Equations are derived to describe the current–voltage relations of Corbino TFT with offset at the drain or source sides. The influence of offset position and parameters on the saturation voltage and the saturation current was described quantitatively. Three-dimensional Computer-Aided Design simulation and experiment results verify the theoretical physical model. Our physical model provides design rules for high voltage offset Corbino TFT when considering the voltage tolerance and saturation current balance.
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