High-voltage TFT fabricated in recrystallized polycrystalline silicon

Abstract

High-voltage thin-film transistors (TFTs) fabricated using CW-Ar laser annealed polycrystalline silicon have an offset gate structure between the source and gate and between the gate and drain. The breakdown voltage, transconductance, and leakage current in various size TFTs are described. These TFTs exhibited n-channel enhancement characteristics with a low-threshold voltage, and a breakdown voltage above 100 V could be obtained at an offset gate length of 20 mu m. Active TFT circuits were fabricated with these high-voltage Si TFTs. These high-voltage TFT circuits can drive thin-film EL (electroluminescent display) at low signal voltage. >