Abstract
The performance of novel polycrystalline silicon based High Voltage Thin Film Transistors (HV-TFT) have been investigated through the use of two dimensional device simulation programs. The advantages associated with use of a Semi Insulating Polysilicon (SIPOS) film between the gate and the drain in a polysilicon HV-TFT is demonstrated for the first time in this paper. The performance of a typical SIPOS HV-TFT is compared with a metal field plate HV-TFT (FP HV-TFT) through the use of two dimensional numerical device simulations. It is shown that the SIPOS film improves the breakdown voltage of the device.
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