Characteristics of Ga-Al Doped Zinc Oxide Thin Films Deposited by Facing Targets Sputtering

Abstract

Gallium-aluminum doped zinc oxide (GAZO) thin film is evaluated as an alternative to ITO for use as transparent electrodes for display devices. GAZO transparent conducting thin films were deposited using a facing targets sputtering (FTS) system with a hetero-targets. The FTS system can generate high plasma density, suppress the bombardment of high-energy particles to the substrate, and reduce the working pressure and substrate temperature. The average transmittance achieved with these films was as high as 80% in the visible range. Using a working pressure of 0.4 Pa, the lowest resistivity achieved with the deposited film was 5.342 × 10−4 Ω·cm.