Abstract
AbstractA new approach to high‐performance a‐Si solar cells was studied. a‐Si films prepared at a high substrate temperature (> 250°C) have a higher absorption coefficient and a low SiH2 bond density. the effect of deposition temperature on the open‐circuit voltage (Voc) has been investigated systematically for glass/SnO2 Ipin/metal and glass/metal/nip/indium tin oxide (ITO) structure a‐Si solar cells. The Voc is found to depend strongly on the thermal history of the p/i interface. A short‐circuit current of 19.5 mA/cm−−2 was achieved for an a‐Si solar cell using an a‐Si i‐layer with a thickness of 4000 Å, which was prepared at a substrate temperature of 270°C.
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