Abstract
We investigated the electrical characteristics of 4H-SiC n- and p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) with ion-implanted buried channels. The effects of the impurity concentrations of the buried channel (Cbc) on their electrical characteristics were quite different. In the case of n-channel MOSFETs, the threshold voltage decreased and the channel mobility increased with an increase in Cbc. On the other hand, in the case of p-channel MOSFETs, the threshold voltage and the maximum channel mobility were almost independent of Cbc. The conduction mechanism of the buried-channel MOSFETs is discussed in this paper.
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