Abstract
In the present work, preparation of SiGe thin buffer film was performed on p-Si single crystals, non-doped β-SiC epitaxial layer was grown on SiGe/Si substrate by means of lower pressure chemical vapor deposition (LPCVD) and ohmic contacts were formed to fabricate typical multilayer sandwich structure of Al/β-SiC/SiGe/P-Si/Al heterojunction. Contrasted β-SiC/SiGe/P-Si heterojunction with β-SiC/P-Si, scanning electron microscope (SEM) images, reverse breakdown voltage, I–V and C–V characteristics are studied. Theory and experimental results show that introduction of SiGe buffer layer can improve interface properties of heterojunction, reverse breakdown voltage and rectification ratio (RR) of the heterojunction.
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