Abstract
In this study, diamond pseudo-vertical architecture Schottky barrier diodes (PVSBDs) through the patterning tungsten growth method have been investigated. The forward current density is 16 A/cm2 at 5 V, and a rectification ratio is more than 5 orders of magnitude at ±5 V for diamond PVSBD. The reverse breakdown voltage is 640 V, and the corresponding electrical field is 4.57 MV/cm. These results are obtained by patterning tungsten (W) on the diamond surface as a blocking layer and growing a diamond epitaxial layer on the uncovered zone. A W/diamond ohmic contact was formed during the diamond epitaxial layer growth process. An aluminum film was used as a Schottky contact. Overall, the results illustrate that W patterned growth to fabricate PVSBD is efficient.
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