Abstract
Noise parameter measurements and a model for 2 × 100 µm SiC MESFETs fabricated in two different processes are presented. The noise characteristics of SiC MESFETs are well described by a standard noise model. The minimum measured noise figure was 2.0 and 2.7 dB with an associated gain of 7.8 and 12 dB, respectively, at 3 GHz for the two processes.
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