Abstract
AbstractIn the paper the problem of modelling DC characteristics of SiC MESFETs is presented. Some modifications of the popular Raytheon–Statz model built‐in in SPICE are proposed. The original and the modified models are verified experimentally by comparison of the measured and simulated device characteristics. One of the two available today on the market SiC MESFETs–the transistor CRF24010 offered by Cree, Inc. is chosen for investigations. Copyright © 2008 John Wiley & Sons, Ltd.
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