Abstract

Ion plating is an atomistic deposition process that utilizes continuous or periodic bombardment of the substrate and depositing atoms of film material by atomic-sized energetic particles. The film material being deposited in the ion plating process can come from any source of condensable atomistic material including thermal vaporization, sputtering, arc vaporization, and chemical vapor precursors. Thermal vaporization is generally used when high deposition rates are desired, while sputter deposition and arc vaporization are used when a lower deposition rate is acceptable. Thermal vaporization and sputter deposition can be combined in the same system; for example, sputter deposition can be used to codeposit the minor constituent of an alloy, while thermal vaporization is used to codeposit the major constituent. The energetic species used to bombard the growing film can be either ions or neutrals, although acceleration of charged ions is the most common way to obtain a controlled bombardment. The bombardment ratio (energetic particles to depositing atoms), particle energy, and energy distribution are important parameters in the ion plating process. The energy should be high enough to give appreciable energy transfer on collision, but should not be high enough to physically implant the bombarding gases in the depositing film where it can precipitate and form voids.

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