Abstract
Columnar-shaped self-assembled quantum dots are grown by stacking indium arsenide (InAs) self-assembled dots with a few-monolayer-thick gallium arsenide (GaAs) intermediate layer. The structure as a whole can be considered as physically coupled large dot. This new dot type has high uniformity in size and high-emission efficiency, which are desirable properties for semiconductor lasers. The growth of quantum dots on ternary indium gallium arsenide (InGaAs) substrates is an alternative way to realize quantum-dot lasers emitting at 1.3 μm. This chapter presents preliminary results on the growth of quantum dots on InGaAs substrates and fabricates 1.3-μm lasers on the ternary substrates with low-lasing threshold and excellent temperature characteristics for future optical interconnection and optical subscriber systems. The chapter also discusses homogeneous broadening at room temperature that is estimated to be more than 10 meV and that can be attributed to the scattering process to exchange electrons (holes) between the ground state and the excited states, including the wetting layers. The homogeneous broadening leads to an interaction of spatially and energetically isolated quantum dots through photons and collective lasing is achieved.
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