Site‐controlled quantum dot growth on buried oxide stressor layers

Abstract

AbstractSite‐controlled growth of quantum dots (QDs) for single photon emitters (SPEs) is achieved applying a buried stressor approach. Theoretical and experimental analysis shows that site‐controlled QD growth on buried oxide stressor‐layers benefits enormously from a defect‐free growth interface. Laterally modulated strain fields at GaAs(001) growth surfaces are used to tailor surface morphologies at the centre of prescribed mesa structures for subsequent QD growth. Suitable morphologies for site‐controlled QD growth such as nano‐hillocks and nano‐holes are identified. Site‐controlled QD growth appears above the boundaries between the oxidised layer and the non‐oxidised semiconductor layer. Through fine tuning of wetting layer thickness and growth interruption high selectivity for QD nucleation is achieved. Thus, growth of single QDs at the centre of a current‐injection limiting aperture is demonstrated. Moreover, the QD growth on a defect‐free surface yields high quality optical properties in terms of narrow emission linewidth and temporal stability with no discernible difference to QDs grown on planar substrates. The technological simplicity of the buried stressor approach and the inherent integration of a current aperture for efficient carrier injection into site‐selected QDs enable mass production of SPEs on large substrate sizes.