Abstract
In this chapter, we will present a digest of the main materials science aspects of the controlled fabrication of 2D arrays of semiconducting (Si, Ge) nanocrystals (NCs) in metal oxide high-κ dielectric layers by using two promising techniques, namely magnetron-sputtering and Ultra Low Energy-Ion Beam Synthesis. In particular, the phase separation process as well as the problems related to humidity penetration or controlled oxidation processes are among the discussed topics. The different state-of-the-art tools for structural characterization will also be described. Finally, the associated electrical characterizations will be presented in order to evaluate the potential of such nanocomposite metal oxide layers for NC memory applications.
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