Chapter 12 - Nonvolatile MOX RRAM assisted by graphene and 2D materials

Abstract

This chapter introduces the research and development status of nonvolatile MOX resistive random access memory (RRAM) device based on graphene and 2D materials. With excellent electronic conductivity, flexibility, transparency and excellent impermeability, 2D graphene has attracted predominant attention for MOX RRAM applications. With the MOX acting as the resistive switching layer, graphene as electrode or assistant intercalation layer has been extensively studied to optimize the device structure. MOX RRAMs decorated by graphene show excellent resistive switching performance in reliability, power dissipation, retention, endurance and so on. In addition, extremely scaling size (sub-10nm) of MOX RRAM has been demonstrated by graphene. Other emerging nitride or transition metal dichalcogenide 2D materials, such as BN, MoS2, MoSe2, etc., have also been introduced to improve the performance of the conventional MOX RRAM. Especially, various MOX RRAM devices based on 2D materials have been demonstrated to possess excellent transparency, flexibility or printability, even under harsh conditions (e.g., high temperature condition). Even there still exists many challenges to overcome, the massive explorations of the application of 2D materials in MOX RRAM provide feasible approaches to improve the storage performance for next generation NVM applications.