Abstract
We describe in some detail the desired characteristics of an exceedingly clean MBE system, its optimal growth conditions, and the main parameters of structures design needed in order to obtain extremely high purity AlGaAs-GaAs heterostructures embedding low disorder two-dimensional (2D) electron systems. A significant part of the chapter deals with the main scattering mechanisms and, consequently, with a variety of methods of ‘modulation doping’, as it governs the detailed disorder in the 2D electron gas. We discuss the limited applicability of the well known electron mobility, being thus far the main figure of merit for the quality of 2D electron gas, to an observed system behavior in the fractional quantum Hall effect. The implications on basic science as well as on applied one are also put in perspective.
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