Chapter 6 - 2D materials for optoelectronics

Abstract

2D materials have a thickness-dependent optical bandgap in the visible to near-infrared wavelength range with carrier mobilities in the range of 1 to 1000 cm2 Vs–1, making them suitable for applications related to light emission and detection in the visible spectrum, photovoltaics, and optical communication. Furthermore, high mechanical strength makes them promising for flexible and wearable optoelectronic devices, and the ability to tailor heterostructure properties with precision and ease can help enhance optoelectronic performance substantially. Graphene and transition metal chalcogenides are the most studied 2D materials for optoelectronic applications. In this chapter we have described typical optoelectronic device architectures, operation mechanisms including the effect of mechanical strain on optoelectronic performance, characterization methodologies, and performance benchmarking for these materials. Conventional optoelectronic devices, such as photodetectors, photovoltaic cells, and light-emitting devices, and the integration of 2D optoelectronics with silicon photonic circuits have been discussed. From an emerging application perspective, the role of 2D materials in neuromorphic devices, biomimetic optical sensors, heterostructure superlattices, and optoelectronic memories has been presented. Finally, we conclude by describing key challenges in optoelectronic device design, processing, and characterization that need to be overcome for scalable and mature 2D optoelectronic technologies.