Abstract
This chapter discusses the metal-assisted plasma etching process (MAPE). It first presents the types and generation of gas plasmas employed in the process including radiofrequency discharges, DC glow discharge, and neutral hydrogen sources and etching. The concept of plasma etching is then introduced, and the etching mechanism is discussed. The chapter also presents the concept and applications of reactive ion etching (RIE), hybrid etching, UV-enhanced metal-assisted wet etching, magnetically guided metal-assisted chemical etching, and applications of plasma.
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